对触媒熔剂法金刚石生长的再认识(Ⅰ)——金刚石晶体生长的准稳定区  

Reunderstanding of Diamond Growth from Flux under HP/HT——Quasi-stable Region of Diamond Crystal Growth

作　　者：王德新[1] 王福泉[1] 刘光海[1] 陈祥安[1] 郑振凯[1] 刘建平[1] 

机构地区：[1]胜利油田钻井工艺研究院,东营257017

出　　处：《人工晶体学报》2001年第4期404-412,共9页Journal of Synthetic Crystals

摘　　要：本文根据溶液晶体生长理论与实践 ,认定在金刚石结晶V形区域内存在着晶体生长准稳定区。熔剂—碳二元共熔体系处于准稳定的过饱和溶液中 ,准稳定的过饱和度是金刚石晶体生长的驱动力。提出了设计合理的加热组装结构、建立金刚石生长适宜压力场、温度场的必要条件 。According to the theory and practice of crystal growth from solution,we consider that there is a quasi stable region in “V” area of diamond crystallization.The flux carbon solution system is in quasi stable supersaturated solution;the supersaturation is driving force for diamond crystal growth.The necessary conditions are proposed for designing rational heating assembly and founding up appropriate pressure and temperature fields so as to ensure the quality of diamond crystal grown by driven quasi stable supersaturation.

关 键 词：金刚石 温度梯度 准稳定区 过饱和度 晶体生长 触媒溶剂法 

分 类 号：TQ163[化学工程—高温制品工业] O782[理学—晶体学]