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机构地区:[1]安徽省安庆师范学院,安徽安庆246003 [2]西安交通大学能源与动力工程学院,陕西西安710049 [3]西安交通大学理学院现代物理研究所,陕西西安710049
出 处:《化学研究与应用》2001年第6期695-698,共4页Chemical Research and Application
基 金:国家自然科学基金 ( 6 99780 18);西安交通大学科研基金和理科基金资助项目
摘 要:Electron trapping material CaS:Eu,Sm has been prepared by the technique of direct doping rare earth.It can convert infrared light (0.8~1.6μm) to visible light (~672nm) and its quantum efficiency is more than 76%.High efficiency and portable cards for infrared laser detection have been made of electron trapping material by using various expertiese and tested on many conditions,such as waterlogging at high and low temperature.According to the test,this kind of infrared detecting card can convert infrared light (0.8~1.6μm) to visible light at room temperature efficiently and can be used extensively for adjusting and detecting infrared laser emitted by YAG,GaAs,InGaAsP.Electron trapping material CaS:Eu,Sm has been prepared by the technique of direct doping rare earth.It can convert infrared light (0.8~1.6μm) to visible light (~672nm) and its quantum efficiency is more than 76%.High efficiency and portable cards for infrared laser detection have been made of electron trapping material by using various expertiese and tested on many conditions,such as waterlogging at high and low temperature.According to the test,this kind of infrared detecting card can convert infrared light (0.8~1.6μm) to visible light at room temperature efficiently and can be used extensively for adjusting and detecting infrared laser emitted by YAG,GaAs,InGaAsP.
关 键 词:稀土直接掺杂工艺 电子俘获材料 红外上转换 红外探测卡 红外探测材料
分 类 号:TN215[电子电信—物理电子学] TN213
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