氧化铟锡靶与铟的润湿性研究  

Study on the wettability between ITO target and indium

作　　者：顾子平 袁镇海[2] 付志强[2] 林松盛[2] 黄剑锋 郑健红[2] 

机构地区：[1]广州凯得控股有限公司,广东广州510730 [2]广州有色金属研究院材料表面工程技术研究开发中心,广东广州510651 [3]广州三盛电子实业有限公司,广东广州510730

出　　处：《广东有色金属学报》2001年第2期138-141,共4页Journal of Guangdong Non-Ferrous Metals

摘　　要：为了解决氧化铟锡靶与铟的不润湿 ,采用了一种特殊的方法 ,在 ITO靶与铟熔体界面处 ,对铟熔体施加局部的高压处理 ,增加了 ITO界面的亚微观缺陷 ,促进了 In与 ITO的渗透和交融 ,实现了 ITO靶与铟的润湿和铺展 ,为 ITO靶和In order to overcome the un wettability between ITO target and In, a special process method is introduced At the interface of ITO target and In melt, exerting localized high pressure on In melt can increase the submicroscopic defects of ITO surface, causing In to penetrate into ITO and binding of them. The resultant wetting and spreading between ITO target and In lay a foundation for the brazing between ITO target and Cu base.

关 键 词：氧化铟锡 溅射 铟 润湿 焊接 

分 类 号：TN304.21[电子电信—物理电子学]