常温一氧化碳气敏元件制备及气敏机理研究  

Preparation of CO gas sensor use at mormal temperature and its mechanism

作　　者：王岚[1] 何敬文[1] 刘雅言[1] 王秀艳[1] 丁金英[1] 殷文春[1] 曾雄辉[1] 

机构地区：[1]中国科学院长春应用化学研究所,吉林长春130022

出　　处：《传感器技术》2001年第9期16-17,共2页Journal of Transducer Technology

摘　　要：介绍了以SnO2 为主 ,掺入Al2 O3 ,MgO ,InO ,Pd等添加剂的常温CO气敏元件的制备方法。根据其晶体结构特点对气敏机理进行了探讨。论述了传感器的信息传感机制 ,即晶界势垒控制和晶粒大小控制机制同时存在。为获得性能良好的气敏元件 。Preparation method of CO gas sensor used at room temperature made from SnO 2 with the stuffing of Al 2O 3,MgO,InO,Pd etc is introduced. The crystal structure and mechanism of gas sensor fabricated by sintering process is discussed. Two kinds of control mechanism of information sensing i.e. potential energy among crystal boundaries and crystalline dimension are presented. The best preparation method and stuffing are needed to get gas sensor with good property.

关 键 词：氧化锡 一氧化碳 气敏元件 气敏机理 半导体材料 

分 类 号：TN304.21[电子电信—物理电子学]