掺钽对二氧化钛压敏电阻性能的影响  

Effect of Ta_2O_5 on titania varistor ceramics

作　　者：李长鹏[1] 王矜奉[1] 陈洪存[1] 苏文斌[1] 钟维烈[1] 张沛霖[1] 

机构地区：[1]山东大学物理系,山东济南250100

出　　处：《功能材料》2001年第6期622-624,共3页Journal of Functional Materials

摘　　要：研究了钽对二氧化钛压敏电阻性能的影响。研究中发现掺入 0 .2 5mol %Ta2 O5的样品显示出最低的反转电压 (Eb= 6V/mm)、最高的非线性常数 (α =8.8)以及最高的相对介电常数 (εr=6 .2× 10 4 ) ,与样品电容和电阻的频谱特性相一致。样品的性能变化可用Ta5+ 对Ti4 +The electrical properties of TiO2 based ceramics with various Ta2O5 dopants were investigated. It was found that an optimal doping composition of 99.75% TiO2&middot0.25% Ta2O5 with low breakdown voltage of 6 V/mm, high nonlinear constant of 8.8 and ultrahigh electrical permittivity of 6.2×104 (measured at 1 kHz), which is consistent with the frequency hygrometer of the capacitance and the resistivity. The characteristics of the ceramics can be explained by the effect and the maximum of the substitution of Ta5+ for Ti4+.

关 键 词：压敏材料 二氧化钛 电学性能 频谱 钽 掺杂 

分 类 号：TN304.93[电子电信—物理电子学]