Ge覆盖多孔硅结构的桔绿光发射  

Orange-Green Emission from Porous Si Coated with Ge Films

作　　者：唐宁[1] 吴兴龙[1] 顾沂[1] 鲍希茂[1] 

机构地区：[1]南京大学物理系固体微结构物理国家重点实验室,南京210093

出　　处：《Journal of Semiconductors》2001年第12期1525-1528,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (No.5 983 2 10 0 )~~

摘　　要：使用 5 14 .5 nm Ar+激光检测了 Ge覆盖多孔硅结构的光致发光谱 (PL) ,观察到峰位 2 .2 5 e V,半峰宽约 0 .1e V的一个新的桔绿发光峰 .随着覆盖 Ge薄膜的加厚 ,这个桔绿发光峰的峰位保持不变 ,但发光强度显著下降 .实验和分析结果表明 ,该桔绿发光峰源于多孔硅和嵌于其孔中的 Ge纳米晶粒两者界面中的Photoluminescene(PL) spectra of porous Si coated with Ge films are examined using the 514 5nm line of Ar + laser.A new orange green PL band,centered at 2 25eV,is observed with full width at half maximum of ～0 1eV.With increasing the thickness of Ge layer coated,the new PL band remains unchanged in peak energy but drops abruptly in intensity.Spectral analysis and some experimental results from Raman scattering and X ray diffraction indicate that Ge related defects at the interfaces between PS and the Ge nanocrystals embedded in the pores are responsible for the orange green PL band.

关 键 词：覆盖多孔硅 光致发光 光谱分析 锗 

分 类 号：TN304.91[电子电信—物理电子学]