砷注入硅热退火过程中杂质再分布的计算机模拟  

The computer simulation of arsenic redistribution in silicon after implantation and annealing

作　　者：张廷庆[1] 刘家璐[1] 李向明 温玉波 李东宏 

机构地区：[1]西北电讯工程学院微电子研究所

出　　处：《核技术》1989年第6期371-375,共5页Nuclear Techniques

摘　　要：根据T.L.Chiu和H.N.Ghosh提出的双受主空位扩散模型,采用Crank-Nicolson六点差分法离散变系数扩散方程,对砷离子注入硅的扩散系数及退火后的杂质分布进行了计算机模拟,并与SRP实测结果、SUPREM-Ⅱ的模拟结果进行了比较。结果表明,用本模型模拟的砷注入硅的扩散分布和结深与SRP实测值比较符合。It is proposed that double acceptor-level vacancies are responsible for arsenic diffusion in silicon. The diffusion equation is solved using the Crank-Nicolson differential method. A computer program is used to calculate diffusion coefficient and diffusion distribution of arsenic implanted into silicon. The results on diffusion distribution and junction depth are compared with the SRP measured profiles and the SUPREM-Ⅱ simulation. A good agreement with the measured values has been observed.

关 键 词：砷 注入 计算机模拟 扩散系数 

分 类 号：TN305.3[电子电信—物理电子学]