再论半导体陶瓷电容器  

Further Discussion on Semiconductive Ceramic Capacitors

作　　者：李标荣 庄严 

机构地区：[1]广州新日电子有限公司,广东广州510335

出　　处：《电子元件与材料》2002年第1期30-34,共5页Electronic Components And Materials

摘　　要：基于自由能越低越稳定原理和芯-壳结构模型,论述了晶粒边界型陶瓷电容器(GBBLC)的形成。根据晶格结构紧密程度和结合能的大小,讨论了SrTiO3陶瓷半导化的途径。通过再氧化、施主离子的表面偏析、正缺位补偿和受主离子的表层结合等作用,而形成了介质壳层。文中还讨论了有关工艺进展及低温一次烧成GBBLC的可能性。Based on the theory that the lower the free energy the more stable the system and the core-shell structural model,the formation mechanism of grain boundary barrier layer capacitors (GBBLC) is discussed. According to the compactness and binding energy of the lattice structure, the way of acquiring semiconductive SrTiO3 ceramics is presented. Via re-oxidization,interfacial donor segregation,cation vacancy compensation and combination the surface layer of acceptors,a dielectric shell is formed on the grain surface layer. The progress in the related technologies and the possibility of processing GBBLC by one-step firing at low temperature are discussed as well.

关 键 词：钛酸锶陶瓷 GBBLD 粒界偏折 陶瓷电容器 半导体 

分 类 号：TM534.1[电气工程—电器]