HL-1装置等离子体辐照TiC涂层实验分析  

ANALYSIS OF TiC COATING EXPOSED TO THE PLASMA OF THE HL-1 DEVICE

作　　者：唐素筠 常淑芬 洪文玉[1] 李国栋[1] 朱毓坤[1] 

机构地区：[1]核工业西南物理研究院

出　　处：《核聚变与等离子体物理》1989年第4期233-236,243,共4页Nuclear Fusion and Plasma Physics

摘　　要：一、引言在聚变等离子体中控制杂质的污染被认为是获得高温等离子体的重要问题之一。因此对材料要进行优化选择,例如石墨和碳就是目前有利的孔栏材料和结构材料。但是由于碳的自溅射作用和化学活性,在高温溅射时可形成易挥发的碳化物,如甲烷等从而增加了化学腐蚀。某些含碳的化合物如TiC,SiC和BC以及氮化物如TiN和Si_3N_4等是目前研究的一些有用途的材料。实际上TiC或TiN已经用于孔栏,壁内衬涂层或高频加热天线。TiC coatings with thickness of 7-10μm deposited on graphite substrate by chemical vapor deposition were exposed to the plasma in the HL-1 device. Samples are observed by means of a scanning electron microscope before and after exposure. Though the TiC coating has been removed obviously from the graphite substrate and chemical erosion is rather serious, the phase structure (cubical TiC) remains unchanged. For comparison, samples were also bombarded by 1keV H^+; the etching depth reached is about 4-5μm.

关 键 词：TIC涂层 等离子体 实验 辐照 

分 类 号：TL67[核科学技术—核技术及应用]