HL-1M装置真空室硅化的研究  

STUDY OF VACUUM WALL SILICONIZATION IN THE HL-1M TOKAMAK

作　　者：严东海[1] 王恩耀[1] 崔成和[1] 梁雁[1] 许正华[1] 张炜[1] 刘建宏[1] 黄永康[1] 

机构地区：[1]核工业西南物理研究院,成都610041

出　　处：《核聚变与等离子体物理》2001年第4期245-252,共8页Nuclear Fusion and Plasma Physics

摘　　要：GDC(He +SiH4 )是为HL 1M装置研制的一种常规壁处理技术。在He辉光等离子体条件下 ,通过气相中的电子碰撞离解、电离、离子 分子反应和在壁面上的He+ 诱导脱H2 过程 ,在清洁的真空壁表面沉积一层无定形、半透明、致密的氢化硅 (α Si∶H)薄膜。氢化硅具有良好的H(D)捕获、H2 (D2 )释放 ,能显著地降低再循环系数 ,有效地控制杂质水平 ,大大拓宽了HL 1M装置的运行范围 ,为HL 1M装置的LHCD、ICRH、ECRH、NBI、PI和MBI实验提供了良好的真空壁条件。GDC (He+SiH 4) is a routine conditioning technology developed for the vacuum wall of the HL-1M tokamak.Under the condition of He glow plasma,an amorphous semitransparent dense hydrogenated silicon (α-Si∶H) thin film is deposited on the clean vacuum vessel wall by way of electron impact dissociation,ionization and ion-molecules reactions in vapor,and He + induced disruption H 2 on surfaces.It is characterized by an excellent H(D) trapping,and H 2(D 2) releasing.It markedly lowers the recycling coefficient,and strongly controls the impurity level.The operation ranges of the plasma density n e,duration t p and confinement time τ E are considerably extended.The favorable vacuum wall conditions are obtained for successful demonstration of LHCD,ICRH,ECRH,NBI,PI,MBI experiments and upgrade plasma operations.

关 键 词：硅化 再循环 真空壁条件 HL-1M装置 电子碰撞离解 真空室 

分 类 号：TL631.24[核科学技术—核技术及应用] TL628