非晶硅Pin二极管的1MeV电子幅照效应  

Effects of 1MeV-Electron Irradiation on a-Si:H Pin Diodes

作　　者：李柳青[1] 廖显伯[2] 游志朴[3] 

机构地区：[1]北京印刷学院基础部,北京102600 [2]中科院半导体所,北京100083 [3]四川联合大学物理系,四川成都610064

出　　处：《电子学报》2001年第8期1076-1078,共3页Acta Electronica Sinica

摘　　要：本文报道a Si∶H本征膜及Pin二极管的 1MeV1 4× 10 15,4 2× 10 15,8 4× 10 15/cm2 电子幅照实验结果和退火行为 .测量了电子辐照对a Si∶H光暗电导率和光致发光谱的影响 ,以及a Si∶HPin二极管光伏特性和光谱响应随电子辐照剂量的变化 .发现电子辐照在a Si∶H本征膜和二极管中引起严重的损伤 ,和二极管光谱响应的峰值“红移” .但未见饱和现象 ,还观测到明显的室温恢复现象 ;但高温退火处理后未能完全恢复 .本文对以上实验结果给出了合理的解释 .This Paper reports the effects of 1 MeV-Electron irradiation on intrinsic a-Si ~{!C~}H films and pin diodes at various fluences of 4~{!A~}10~{*,*)~}15~{**~},4~{*1~}2~{!A~}10~{*,*)~}15 ~{**~},8~{*1~}4~{!A~}10~{*,*)~}15~{**~} cm 2.The changes in the dark-photo conductivities and Pho toluminescence(PL)of a-Si~{!C~}H films with the fluences of electron irradiation we re measured.The changes in the illuminated J-V characteristics and the optical spectral response of a-Si~{!C~}H pin diodes with the fluences of electron irradiati on were also measured.The electron irradiation could induce significant damage i n the films and diodes,and redshifts of the peak value of the optical spectral r esponse in the diodes,but there was no saturation phenomenon observed.The anneal ling behaviours of the irradiation induced-defects were also investigated.It wa s found that the electron irradiation induced effects could not be completely re covered by high temperature annealling,although a part of the irradiation damage was recovered at room temperature.We discussed these experimental results and g ave a reasonble explaination for them.

关 键 词：PIN二极管 电子辐照效应 非晶硅 

分 类 号：TN31[电子电信—物理电子学]