光电双基区晶体管(PDUBAT)物理模型探讨  

Discussion on the Physical Model in Photoelectric Dual Base Transistor

作　　者：郑云光[1] 张世林[1] 郭维廉[1] 李树荣[1] 沙亚男[1] 毛陆虹[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《电子学报》2001年第8期1123-1125,共3页Acta Electronica Sinica

基　　金：天津市自然科学基金资助项目 (No 98360 1 4 1 1 )

摘　　要：本文通过分析器件内部电流传输探讨了光电双基区晶体管 (PDUBAT)负阻特性产生机理 ,首次提出了PDUBAT负阻形成的原因是其输出管横向输出电流的反馈作用 。Through analyzing the internal current transport in photoelectric dual-base transistor (PDUBAT), the physical mechanism for the origin of the negative resistance characteristic in the device is discussed. We propose that the cause for the negative resistance in PDUBAT is coming from the feedback effect of the lateral component of output of the vertical transistor in PDUBAT for the first time. This viewpoint is confirmed by experiment.

关 键 词：光电双基区晶体管 间接耦合光电探测器 物理模型 

分 类 号：TN32[电子电信—物理电子学]