用于传导EMI仿真的二极管高频模型的研究  

Study of the Model of PIN Diode for Conducted EMI Simulation

作　　者：袁义生[1] 谌平平[1] 穆斯塔法[1] 钱照明[1] 

机构地区：[1]浙江大学,杭州310027

出　　处：《电力电子技术》2001年第6期48-51,共4页Power Electronics

基　　金：国家自然科学基金资助 (5 0 0 770 2 0 )

摘　　要：阐述了一种能够仿真PIN二极管传导EMI的高频模型。该模型全面考虑了二极管的正向恢复、端区复合以及空间电荷区边界移动效应 ,并且利用Saber的MAST语言得以实现。仿真和实验结果的比较也证明了该模型的正确性和准确性。A high frequency model of PIN diode for simulating conducted EMI is developed.The model takes into consideration of forward recovery,reverse recovery,emitter recombination and movable bound effect and is completed by MAST in Saber.The comparison between simulation and experiment verifies the model availability.

关 键 词：仿真 PIN二极管 高频模型 EMI 

分 类 号：TN312[电子电信—物理电子学]