Z向限制法生长大尺寸脲单晶与其正电子湮没谱的研究  

Study on the Urea Crystal Growth by Limiting the Growth in Z Direction and Its-Positron Annihilation

作　　者：黄炳荣[1] 史子康[1] 苏根博[1] 

机构地区：[1]中国科学院福建物质结构研究所,福州350002

出　　处：《人工晶体学报》1991年第1期33-38,共6页Journal of Synthetic Crystals

摘　　要：本文报导了用z向限制法生长大尺寸高光学质量的脲单晶技术,对所生长的单晶用正电子湮没寿命谱学法进行了研究。发现在(010)和(100)晶面的空位捕获率(k_d)及空洞捕获率(k_D)均比(110)面大,证实了脲单晶生长沿(110)、(110)和(110)、(110)这四个面法线方向生长是有利的,以及本文所介绍的生长工艺是合理的。A technique of growing urea crystal with large size and high optical quality by means of limiting growth along the z direction,and its research on the positron annihilation are reported. It is found that negative monovacancy and hole capture rates in the (010) and (100) face are more than in (110) face, demonstrating that urea crystal growing along [110],[110], [110] and [110] directions are Beneficial, and the growing technique reported in this paper is rational.

关 键 词：尿素 晶体 正电子湮没 晶体生长 

分 类 号：O613.61[理学—无机化学]