硼硅玻璃与单晶硅场致扩散连接形成机理分析  

Joining Mechanism of Field-assisted Bonding of Electrolyte Glass to Silicon

作　　者：孟庆森[1] 张莉娜[1] 喻萍[1] 薛锦[1] 

机构地区：[1]西安交通大学焊接研究所

出　　处：《材料热处理学报》2001年第4期17-20,共4页Transactions of Materials and Heat Treatment

摘　　要：以固体电解质硼硅玻璃与单晶硅为实验材料 ,研究了玻璃—金属FDB连接过渡区的微观组织特征 ,分析了连接形成机理及主要工艺参数对连接过程的影响。提出了金属 -氧化物过渡层—玻璃接头结构形式及静电场条件下离子扩散及接合模型。研究认为 ,金属玻璃的界面接合归因于玻璃中负氧离子的扩散及界面复合氧化物的形成 ;呈横向柱状组织的复合氧化物对连接强度具有重要意义。The microstructure and element distribution near interface of electrolyte glass silicon joining was investigated. The influence of technological parameters on joining process was studied. The joining mechanism was found to be the formation of oxide layer due to the migration and diffusion of ions. It was also found that the columnar microstructure in transitional layer is favorable to the strength of joins.

关 键 词：场致扩散焊 过渡区 单晶硅 硼硅玻璃 

分 类 号：TG453.9[金属学及工艺—焊接]