气压烧结——一种大有前途的氮化硅陶瓷制备方法  

GAS PRESSURE SINTER-A COMING PREPARATION METHOD OF SILICON NITRIDE CERAMIC

作　　者：肖钢[1] 刘曙红[1] 

机构地区：[1]株洲硬质合金厂,株洲412000

出　　处：《硬质合金》2001年第3期187-192,共6页Cemented Carbides

摘　　要：介绍了气压烧结氮化硅陶瓷的研究开发成果 ,论述了气压烧结的生产工艺及其显微结构与力学性能 ,并与传统的生产方法进行了对比。气压烧结制备的氮化硅陶瓷可形成原位增韧结构 ,具有高韧性、高强度和好的耐磨性。并可直接制取接近最终形状的各种复杂形状制品 ,从而可大幅度降低生产成本和加工费用 。The research and developed achievements of gas pressure sintering silicon nitride ceramic is introduced, the process and microstructure and mechanical properties of gas pressure sintering silicon nitride are discussed,and then compared with traditional methods. The silicon nitride ceramic prepared by GPS can form situ toughened structure, and posses high toughness and high strength and good wear resistance. GPS method can fabricate complex-shaped product which near the final shape, and then can reduce the producing-machining costs largely. GPS is fit for large scale production.

关 键 词：气压烧结 氮化硅陶瓷 显微结构 力学性能 原位增韧 

分 类 号：TQ174[化学工程—陶瓷工业]