(Li,Nb)掺杂SnO_2压敏材料的电学非线性研究  

Investigation of SnO_2-Li_2O-Nb_2O_5 Varistor System

作　　者：李长鹏[1] 王矜奉[1] 陈洪存[1] 苏文斌[1] 李明明[2] 

机构地区：[1]山东大学物理系,济南250100 [2]济南大学物理系,济南250002

出　　处：《压电与声光》2001年第5期362-365,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目 ( 5 0 0 72 0 13)

摘　　要：研究了掺锂对 Sn O2 压敏电阻器性能的影响。研究发现 L i+ 对 Sn4+ 的取代能明显提高陶瓷的烧结速度和致密度 ,且能大幅度改善材料的电学非线性性能。掺入 x(L i2 CO3)为 1.0 %的陶瓷样品具有最高的密度 (ρ=6 .77g/ cm3)、最高的介电常数 (ε=185 1)、最低的视在势垒电场 (EB=6 8.86 V/ mm)和最高的非线性常数 (α=9.9)。对比发现 ,Na+ 由于具有较大的离子粒半径 ,其掺杂改性性能相对较差。提出了 Sn O2 · L i2 CO3· Nb2The electrical properties of(Nb,Li) doped SnO 2 ceramics as a new varistor material were investigated The substitution of Sn 4+ with Li + increase the concentration of oxygen vacancies,together with formation of solid solution,which will increase the sintering rate and the densites greatly,decrease the best sintering temperature and improve the nonlinear electrical properties The sample x (SnO 2)97 95%, x (Li 2O)1 0%, x (Nb 2O 5)0 05% possess the highest density( ρ =6 77 g/cm 3),the highest permittivity( ε =1 851)?the lowest reference voltage( E B=68 86 V/mm) and the highest nonlinear electrical coefficient( α =9 9)?Na +,with a larger ion radius,plays a smaller effect on the improvement of nonlinear electrical properties In order to illustrate the grain boundary barriers formation in SnO 2·Li 2O·Nb 2O 5 varistors,a grain boundary defect barrier model was proposed

关 键 词：压敏材料 二氧化锡 电学性能 缺陷势垒模型 掺杂 压敏电阻器 

分 类 号：TN379[电子电信—物理电子学] TM54[电气工程—电器]