掺Y对二氧化钛低压压敏陶瓷性能的影响  

Effect of Y on the Properties of Low-voltage TiO_2-based Varistor Ceramics

作　　者：苏文斌[1] 王矜奉[1] 李长鹏[1] 陈洪存[1] 李明明[2] 

机构地区：[1]山东大学物理系,济南250100 [2]济南大学物理系,济南250002

出　　处：《压电与声光》2001年第5期402-404,408,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目 ( 5 0 0 72 0 13)

摘　　要：通过对样品密度、介电常数、I- V特性及晶界势垒特性的测定和分析 ,研究掺 Y对 (Y ,Nb)掺杂的二氧化钛低压压敏 -电容性能的影响。掺入 x(Y2 O3) 0 .6 0 %的样品显示出最高的非线性常数 (α=7.86 )以及最高的相对介电常数 (εr=8.5 4× 10 4)和样品密度 (可达理论密度的 98.8% ) ,与该样品最高且窄的晶界缺陷势垒相一致 ,是一种较为理想的压敏 -电容陶瓷。提出了 Ti O2 · Y2 O3· Nb2The electrical properties of TiO 2 based ceramics with various Y 2O 3 dopants were investigated by measuring the properties of I V ,permittivity,density and boundary defect barriers.It was found that an optimal composition doped with x (Y 2O 3) 0.60% exhibit the highest nonlinear constant of 7.86,highest electrical permittivity of 8.54×10 4(measured at 1 kHz)and the highest density(98.8% of theoretical density),which is consistent with the highest and narrowest grain boundary defect barriers.In order to illustrate the grain boundary barriers formation in TiO 2·Y 2O 3·Ta 2O 5varistors,an grain boundary defect model was also introduced.

关 键 词：二氧化钛 电学性能 频谱 掺杂 低压压敏陶瓷 

分 类 号：TM282[一般工业技术—材料科学与工程]