超晶格界面的电子反射及引起的光电流特性  

Electron Reflection at Interface in Superlattice and Induced Photocurrent Characteristics

作　　者：程兴奎[1] 马洪磊[1] 周均铭[2] 黄绮[2] 王文新 

机构地区：[1]山东大学光电材料与器件研究所,济南250100 [2]中国科学院物理研究所,北京100080

出　　处：《量子电子学报》2001年第5期462-465,共4页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金资助项目(No.69976016);山东省自然科学基金资助课题(No.Y98G11107).

摘　　要：测量了 ＧａＡｓ／ＡｌＧａＡｓ超晶格在 Ｔ＝７７ Ｋ时的光电流谱，发现在波数 ■＝１５８９ ｃｍ－１存在一个强电流峰．理论分析认为，该电流峰与超晶格界面的电子反射有关．据此算出的电流峰位置与实验观测结果一致．Photocurrent spectrum for GaAs/AlGaAs superlattice at T = 77 K was measured. A strong photocurrent peak at ■ = 1598 cm-1 in the photocurrent spectrum was observed. It; was believed that the strong photocurrent peak is relevant to electron reflection at interface in superlattice. On the basis of the point of view, calculated position of peak of photocurrent is in very good agreement with experiment result.

关 键 词：超晶格 电子反射 光电流特性 

分 类 号：TN304[电子电信—物理电子学]