Cd_(0.9)Mn_(0.1)Te晶体生长及其缺陷分析  

Crystal Growth of Cd_(0.9) Mn_(0.1)Te and Defect Analysis

作　　者：常永勤[1] 谷智[1] 郭喜平[1] 介万奇[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《材料科学与工程》2001年第4期14-19,共6页Materials Science and Engineering

基　　金：国家自然科学基金;航空科学基金资助项目

摘　　要：采用Bridgman法和ACRT B法生长了两根Cd0 9Mn0 1Te晶锭 (简称CMT B和CMT A)。采用光学金相显微镜和扫描电镜研究了这两种方法生长的晶体中出现的各种缺陷 ,并分析了其形成机理。采用JEOL 733电子探针测定了两根晶锭中Mn的分布。对比CMT B和CMT A两根晶锭 ,发现ACRT所产生的对流可提高Cd0 9Mn0Cd 0 9 Mn 0 1 Te crystals were grown by both Bridgman and ACRT\|B methods. Using an optical microscope, a scanning electron microscope and a x\|ray powder diffractometer, the defects and their formation mechanisms were analyzed. Using a JEOL\|733 electron microprobe, Mn distribution was determined. It was found that ACRT convection could reduce the quantity of both dislocation and microcracks, and homogenous Mn distribute.

关 键 词：Cd1-xMnxTe BRIDGMAN法 ACRT-B法 微裂纹 位错 晶体生长 单晶 镉锰碲化合物 半导体材料 缺陷 

分 类 号：TN304.26[电子电信—物理电子学] O78[理学—晶体学]