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作 者:王军华[1]
出 处:《中国粉体技术》2001年第6期10-13,共4页China Powder Science and Technology
摘 要:用射频溅射法制备了金属 /半导体 Fex(In2 O3) 1-x 颗粒膜。实验结果表明 :纳米尺度的Fe颗粒比较均匀地分布在非晶态母体In2 O3 中。退火可使In2 O3 晶化。该样品在室温下表现出超顺磁驰豫 ,符合Langevin方程。光学测量表明 :嵌Fe的磁性颗粒膜 ,其电子的带间跃迁由In2 O3 的直接跃迁变为间接跃迁 ,基本吸收边红移 ;随磁性增强 ,局域态尾变宽 。Metal/semiconductor Fe x (In 2O 3) 1-x granular films were prepared by the RF sputtering.The results show that the nanometer sized Fe particles uniformly dispersed in the amorphous matrix In 2O 3.In room temperature,the magnetic behavior of the films shows super paramagnetic relaxation and in good agreement with Langevin function.The spectra analyses indicate that the indirect photon transitions of granular Fe x (In 2O 3) 1-x films substitute for the direct photon transitions of In 2O 3 film in the absorption process and the fundamental absorption edges become flat.The optical energy gap decreases with increasing magnetic moments in the films while the width of the tail of localized state increases.
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