掺锑对二氧化锡压敏电阻性能的影响  

Effect of Antimony on the Electrical Properties of Thin Oxide Varistors

作　　者：李长鹏[1] 王矜奉[1] 陈洪存[1] 苏文斌[1] 刘华 钟维烈[1] 张沛霖[1] 

机构地区：[1]山东大学物理系,济南250100

出　　处：《压电与声光》2001年第4期309-312,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目 ( 5 0 0 72 0 13)

摘　　要：通过对样品 V- I特性和势垒特性的测试和分析 ,研究了掺锑对二氧化锡压敏电阻性能的影响。Sn O2 ·Co2 O3基本上不具有电学非线性 ,掺杂很少量的 Sb2 O3可明显改善材料的非线性。研究中发现掺杂 x ( Sb2 O3)为0 .0 1%的样品具有最高的质量密度 (ρ=6.90 g/ cm3)、最高的视在势垒电场 ( EB=2 76V / cm)和最好的电学非线性( α=12 .89)。提出了 Sn O2 · Co2 O3· Sb2 O3的晶界缺陷势垒模型。The effect of Sb 2O 3 on the electrical nonlinear properties of SnO 2 based ceramics was investigated by measuring the properties of V-I and the properties of the boundary barriers.SnO 2·Co 2O 3 ceramics do not exhibit electrical nonlinearity.A little amount of Sb 2O 3 can improve the nonlinear properties of the samples greatly.It was found that the sample doped with x (Sb 2O 3) 0.01% exhibits the highest density,the highest reference electrical field and the best electrical nonlinearity.A grain-boundary defect barrier model of SnO 2·Co 2O 3·Sb 2O 3 varistor was also introduced.

关 键 词：氧化锑 电学性能 压敏电阻性能 二氧化锡 

分 类 号：TN379[电子电信—物理电子学]