COT-H在金属Ru表面上沉积的光电子能谱分析  

Investigation on the Interface between COT-H and Ru by UPS

作　　者：施申蕾[1] 楼辉[2] 张建华[1] 吕萍[2] 江宁[1] 何丕模[1] 鲍世宁[1] 

机构地区：[1]浙江大学物理系 [2]浙江大学化学系,杭州310027

出　　处：《物理化学学报》2002年第1期30-33,共4页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(10074054和20074032)资助项目~~

摘　　要：采用紫外光电子能谱(UPS),分析了不对称四苯基四苯乙炔基环辛四烯(COT-H)有机发光材料与金属之间的界面电子结构,研究了在金属/COT-H界面上的逸出功变化.UPS谱中位于费米能级以下5.6、7.9和10.2eV处的三个谱峰分别来自于COT-H材料中苯环的πCC、σCC和σCH轨道.位于3.8eV处的谱峰反映了八个苯环聚合后具有π轨道特性的C-C键.从UPS谱图中可以看到,COT-H材料的最高占有态(HOS:highestoccu-piedstate)位于费米能级以下1.8eV处.COT-H材料的逸出功只有3.2eV,比清洁Ru表面的逸出功小1.0eV.角分辨紫外光电子能谱(ARUPS)的结果表明,组成COT-H分子应该近似平行于衬底表面.The electronic structure of the interface between cyclooctatetrene(COT H) and Ru metal is studied by the ultraviolet photoelectron spectroscopy(UPS). Three peaks are observed at 5.6, 7.9 and 10.2 eV below the Fermi level, they are related to the πCC, σCC and σCH bands of the phenyl in the COT H material respectively. The peak at 3.8 eV below the Fermi level is related to the C-C band with π characteristic orbit derived from the COT H containing eight phenyls. The highest occupied state (HOS) of COT H is at 1.8 eV below the Fermi level. The work function of COT H is only 3.2 eV, 1.0 eV lower than that of clean Ru. The results of the angle resolved ultraviolet photoelectron spectroscopy (ARUPS) suggest that the molecule of COT H is approximately parallel to the substrate surface.

关 键 词：有机发光材料 紫外光电子能谱 界面电子结构 环辛四烯 有机发光器件 金 表面沉积 

分 类 号：O657.62[理学—分析化学]