K(TCNQ)薄膜的制备及其电双稳特性  

Preparation and Electrical Bistable Property of K(TCNQ) Thin Film

作　　者：蔡亲佳[1] 陈国荣[1] 莫晓亮[1] 范智勇[1] 顾海华[1] 姚彦[1] 杨剑[1] 华中一[1] 徐华华[2] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]复旦大学化学系,上海200433

出　　处：《真空科学与技术》2001年第5期364-367,共4页Vacuum Science and Technology

摘　　要：在真空环境下 ,首次利用固态化学置换反应制备了K(TCNQ)薄膜 ,其分子结构与已报道过的K(TCNQ)单晶、多晶相同。但不同的是 ,在 30 0K以上 ,K(TCNQ)薄膜具有可逆的双稳特性。The K(TCNQ) thin film was prepared by a method of solid chemical replacement reaction in vacuum. The molecular structure obtained in the film is the same as that in K(TCNQ) single crystal and polycrystalline solids. The film shows electric bistable behavior above 300 K, which is different from single crystal of K(TCNQ). It is expected that this material will be applied to fabricate photoelectric switch and in electric information storage.

关 键 词：固态化学置换反应 K(TCNQ)薄膜 电双稳特性 电荷转移络合物 7 7 8 8-四氰基苯酯二甲烷 

分 类 号：O484.42[理学—固体物理]