掺锡C60薄膜材料的电子结构与电导性研究  

Structure and Conductivity of Sn-deped C60 Thin Films

作　　者：伍春燕[1] 张海燕[1] 何艳阳[1] 梁礼正[1] 朱艳娟[1] 张春华[1] 

机构地区：[1]广东工业大学应用物理系,广州510090

出　　处：《材料科学与工程》2001年第3期92-94,共3页Materials Science and Engineering

基　　金：广东省自然科学基金项目 ( 980 419)

摘　　要：本文报道了锡掺杂C6 0 薄膜样品的扫描电镜 ,X射线衍射 ,紫外可见吸收光谱和电阻随温特性的测量结果 ;显示样品由纳米级颗粒组成 ,为面心立方结构 ,掺杂锡原子在禁带中形成施主能级 ,电阻随温度增加呈指数衰减 ,霍耳效应证实为N型半导体。This article reports our measure results of scanning electron microscope, X-ray diffraction, UV-optical absorption and resistivity changes depended on tempture for Sn-doped C 60 thin film. The results show that the specimen is formed of tiny drops in nano magnitude, The arystal structure is f.c.c., The doped Sn atoms form donor energy level, and the tesistivity attenuates exponentialy with tempture increases. hell effect measurement indicates that this thin film is N-type semiconduct.

关 键 词：锡掺杂 紫外可见光吸收 电阻 C60薄膜 碳60薄膜 半导体 电子结构 电导性 

分 类 号：TN304[电子电信—物理电子学] O484[理学—固体物理]