氢化纳米硅薄膜光电性质及其应用研究进展  

Latest Development in Optoelectronic Properties and Its Application of Hydrogenated Nano-crystalline Silicon Thin Films

作　　者：韦文生[1] 王天民[1] 王聪[1] 

机构地区：[1]北京航空航天大学理学院材料物理与化学研究中心,北京100083

出　　处：《材料导报》2002年第2期37-39,共3页Materials Reports

摘　　要：氢化纳米硅(nc-Si:H)薄膜具有室温下的高电导率、电致发光及光致发光等独特的性能,可应用于超大规模集成电路中,因而引起人们广泛的研究兴趣。简单地综述了国内外有关nc-Si:H薄膜的制备方法、导电机理、发光机理及其应用于量子功能器件等方面的研究工作。Hydrogenated nano-crystalline silicon(nc-Si:H) thin films have many novel optoelectronic properties and have stimulated intensive interest in their application.In this article,the methods of preparation,the growth mechanism of nano-crystalline of silicon in the films,the mechanism of conduction and luminescence,the applications as a quantum-sized functional device in ultra-large scale integrated circuits are reviewed-Its current problems and future directions discussed.

关 键 词：氢化纳米硅(nc-Si:H)薄膜 光电性质 量子功能器件 电导率 制备 发光机理 结构 光致发光 电致发光 光学性质 

分 类 号：TN304.055[电子电信—物理电子学] O484.4[理学—固体物理]