碲镉汞p-on-n光伏器件优化掺杂的理论计算  

THEORETICAL CALCULATION OF DOPING OPTIMIZATION FOR p-on-n HgCdTe PHOTODIODE

作　　者：李向阳[1] 方家熊[1] 

机构地区：[1]中国科学院上海技术物理研究所,传感技术国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2002年第1期71-73,共3页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金 (批准号 1980 5 0 14 )资助项目~~

摘　　要：从理论上考虑了碲镉汞长波光电二极管的主要电流机制 ,并采用合适的参数对R0 A进行了计算 .结果表明 ,由于隧道电流的限制 ,对于一定的衬底浓度 ,选择 p区掺杂的浓度不宜过大 ,反之亦然 .计算得到了优化掺杂浓度与衬底浓度的关系和相应的R0By considering the main current mechanism in the long-wavelength HgCdTe photodiode, theoretical calculation of R 0A was done by choosing proper parameters. Calculations show that, given n side substrate concentration, the p side doping concentration should not be too large on considering the limitation of the tunneling current,and vice versa. The relation of optimal concentration with the substrate concentration was calculated and the corresponding R 0A was also obtained.

关 键 词：碲镉汞光电二极管 p-on-n型 优化设计 理论计算 电流机制 光伏器件 长波红外探测器 

分 类 号：TN364.2[电子电信—物理电子学] TN215