用化学气相沉积法制备红外体块晶体ZnS(英文)  

Preparation and Characterization of Infrared ZnS Bulk Crystal by Chemical Vapor Deposition Method

作　　者：闫泽武 王和明 蔡以超 杨耀源 东艳苹 方珍意 李楠 孙振宇 李洪生 

机构地区：[1]中非人工晶体研究院,北京100018

出　　处：《人工晶体学报》2002年第1期22-25,共4页Journal of Synthetic Crystals

摘　　要：本文报道了采用化学气相沉积法制备红外ZnS体块晶体的工艺及其性能。并用傅立叶红外光谱仪测试了材料的红外性能 ,研究了晶体缺陷对材料红外透过率的影响。结果表明 :通过优化生长工艺 ,使反应室的压力在 5 0 0～ 10 0 0Pa之间变化 ,沉积温度控制在 5 5 0～ 6 5 0℃之间 ,可以制备出厚度均匀 ,红外透过率 (3- 5 μm和 8～ 12 μm)在70 %以上 ,尺寸达 2 5 0mm× 2 5 0mm× 15mm高质量的ZnS体块晶体。The preparation and characterization of infrared ZnS bulk crystal by chemical vapor deposition (CVD) method is reported in this paper. Deposition process consists of the nucleation and growth process of ZnS. The chamber pressure is kept at 500-1000Pa, the substrate temperature is controlled within 550-650℃. The active raw gases of H 2S and optimum technique for ZnS growth are used. The size of infrared ZnS bulk crystal is up to 250mm×250mm×15mm . The structural and optical properties of the crystal have been analyzed by using infrared spectroscopy. The results show that the crystal obtained under these conditions is highly uniform and transparent. The transmittance from 3μm to 5μm and from 8μm to 12μm is over 70%.

关 键 词：硫化锌 化学气相沉积法 红外性能 红外晶体 制备 工艺 性能 

分 类 号：O734[理学—晶体学] O782.9