Ce:YAP晶体生长和光谱性质  

Growth and Optical Spectra of Ce:YAP Crystal

作　　者：章连文[1] 朱世富[1] 王永国[2] 杨浔[2] 李玉明[2] 徐学珍[2] 桂尤喜[2] 

机构地区：[1]四川大学材料科学系,成都610064 [2]华北光电技术研究所,北京100015

出　　处：《人工晶体学报》2002年第1期54-57,共4页Journal of Synthetic Crystals

基　　金：瑞士欧洲核子中心资助项目

摘　　要：本文报道了用中频感应加热提拉法生长Ce :YAP晶体 ,晶体尺寸为35mm× 80mm。在部分晶体中观察到了开裂、解理、孪晶、云层、核心和生长层等宏观缺陷 ,分析了缺陷与晶体生长温度梯度等因素的关系 。The growth of Ce:YAP single crystal by the Czochralski method with medium frequency RF induction heating has been reported in this paper.The dimension of the crystal is  35mm×80mm.Macroscopical defects such as crack,twin,cleavage,center core,clouldness and growth layer have been observed in some of the as grown crystals.The relation between crystal defects and thermal gradient(and other growth conditions)has been discussed.The absorption and fluorescence spectra of the crystals have been studied,too.

关 键 词：CE:YAP 闪烁晶体 晶体生长 缺陷观察 光谱 性质 

分 类 号：O782.5[理学—晶体学]