调整VO_2薄膜相变特性和TCR的制备及辐照方法  

Innovation for preparation condition and electron irradiation for phase transition properties and TCR in VO_2 thin film

作　　者：卢勇[1] 林理彬[1] 何捷[1] 

机构地区：[1]四川大学物理系辐射物理及技术教育部重点实验室,成都610064

出　　处：《激光技术》2002年第1期58-60,共3页Laser Technology

摘　　要：采用不同的真空还原时间、真空退火温度和衬底制备出了VO2 薄膜 ,并对制备出的薄膜进行电子辐照。通过测试辐照前后的VO2 薄膜相变电学性能及低温半导体相电阻 温度系数 (TCR) ,表明不同的制备工艺和不同注量的电子辐照可明显改变VO2 薄膜相变过程中电学性能 ,提高薄膜的电阻 温度系数。对影响VO2VO 2 thin films are prepared under different conditions and irradiated by electron beam with fluence of 10 13 /cm 2 ～10 17 /cm 2.The phase transition properties and temperature coefficient of resistance are measured with or without electron irradiation.The results show that different preparation conditions and electron irradiation can change the phase transition properties and TCR in VO 2 thin films.Other factors that affect the electrical properties and TCR in VO 2 thin films have also been discussed.

关 键 词：VO2薄膜 电阻温度系数 电学性能 电子辐照 相变特性 

分 类 号：O484.5[理学—固体物理]