MnCO_3掺杂对SnO_2·Ni_2O_3·Nb_2O_5压敏材料性能的影响  

Effect of Mn^(2+)on the Electrical Nonlinearity of SnO_2·Ni_2O_3·Nb_2O_5 Varistors

作　　者：李长鹏[1] 王矜奉[1] 陈洪存[1] 苏文斌[1] 钟维烈[1] 张沛霖[1] 

机构地区：[1]山东大学物理系,济南250100

出　　处：《压电与声光》2002年第1期50-53,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目 (5 0 0 72 0 13 )

摘　　要：研究并分析了 Ni3+ 掺杂和 Co2 + 掺杂对 Sn O2 压敏电阻致密度和电学非线性性能的影响。研究了掺Mn2 +对 Sn O2 · Ni2 O3· Nb2 O5压敏材料性能的影响。发现 x(Mn CO3)为 0 .10 %时 ,压敏电阻具有最高的视在电场(EB=6 86 .89V/ m m)和最好的电学非线性性能 (α=12 .9)。样品的收缩率和致密度变化趋势不一致 ,这是因为样品的致密度是由收缩率和 MnThe reason that the (Ni,Nb) doped SnO 2 varistors exhibits a poorer densification and electrical nonlinearity than the (Co,Nb) doped SnO 2 varistors is explained.The effect of Mn 2+ on the electrical nonlinear properties of SnO 2 based ceramics was investigated.The sample doped with 0.10% MnCO 3 exhibits the highest reference electrical field of 686.89 V/mm,the highest electrical nonlinear coefficient of 12.9,which is consistent with the highest grain boundary defect barriers.It can be explained by the effect of the substitution of Sn 4+ for Mn 2+ ,which facilitate the formation of the defect barriers,and the maximum of the substitution.The shrinkage rates increase with the doping of MnCO 3,although the sample doped with 0.5% MnCO 3 possesses the highest density ( ρ =6.87 g/cm 3).

关 键 词：压敏材料 二氧化锡 碳酸锰 电学性能 掺杂 压敏电阻器 

分 类 号：TN379[电子电信—物理电子学]