用于平板摄像的CdSe靶面淀积参数对摄像特性的影响  

The Effect of Deposition Parameters on CdSe Target Performances of FPC Tube

作　　者：吕永积 刘光诒[2] 邵佑军 施化芬 

机构地区：[1]广电总局广科光电研究所,北京102206 [2]中国科学院电子学研究所,北京100080

出　　处：《科学技术与工程》2002年第1期59-60,共2页Science Technology and Engineering

基　　金：国家自然科学基金(69971011)资助

摘　　要：为了开发用于真空微电子平板摄像管 Vacuum Microelectronics FlatPanel Camera Tube(VME FPC)的高灵敏度 CdSe 多层光导靶面,改建了一台精确控制 CdSe 材料的蒸发速率、厚度和基体温度的高真空热蒸镀设备,开发了由真空热预处理,非真空热后处理组成的系列新处理工艺,制造出了新的高性能的 CdSe多层光导靶。In order to develop a multilayer photoconductive target based on CdSe with high light sensitivity for use in vacuum microelectronics flat panel camera tube(VEM FPC),a multiple sources thermal evaporated CdSe material has been designed and re installed,meanwhile a new annealed technology composed of the vacuum heat pre treatment(VHPT)and the non vacuum heat after treatment(NHAT) has been developed.The development in these two respects,along with other technologies bring about a new multiplayer CdSe photoconductive target with remarkable performance.

关 键 词：真空热预处理VHPT 非真空热后处理NHAT 平板摄像管 摄像特性 淀积参数 CdSe多层光导靶面 热处理工艺 

分 类 号：TN142[电子电信—物理电子学]