半导体微腔中电偶极子的自发发射  

Spontaneous Emission of Electrical Dipoles in a Semiconductor Microcavity

作　　者：刘文楷[1] 林世鸣[1] 曲延峰[2] 武术[1] 张存善[3] 

机构地区：[1]中国科学院半导体研究所 [2]中国科学院半导体研究所神经网络实验室,北京100083 [3]河北工业大学电气信息学院,天津300130

出　　处：《光电子．激光》2002年第1期12-15,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目 (698962 60 ;6993 70 10 )

摘　　要：由于反射电场的影响 ,电偶极子在微腔中的自发发射速率不同于自由空间中的自发发射速率。本文采用镜像法计算了理想平面微腔、金属平面镜组成的半导体微腔和由分布布喇格反射镜 (DBR)作为谐振腔的垂直发射激光器 (VCSEL)中电偶极子的自发发射速率。计算结果表明 :由于微腔的调制作用 ,在某些情况下电偶极子自发发射速率增加 。Because of the reflected field the spontaneous emission rate of an electrical dipole in semiconductor microcavity is different from that in free space.In this paper the spontaneous emission rate of an electrical dipole in an ideal plane microcavity,semiconductor microcavity with mentallic mirriors and vertical cavity surface emitting lasers (VCSEL) with distributed Bragg reflectors has been calculated by fictitious image method.Calculation indicates that in microcavity the spontaneous emission rate of an electrical dipole can be enhanced in some condition and in some cavity length the spontaneous emission rate can be inhibited.

关 键 词：自发发射速率 半导体微腔激光器 垂直腔面发射激光器 电荷极子 

分 类 号：TN248.4[电子电信—物理电子学]