CdSe/HgSe/CdSe量子点量子阱(QDQW)晶粒的光学性质和电子结构  

Electronic structure and optical properties of CdSe/HgSe/CdSe quantum dot quantum well

作　　者：徐岭[1] 马懿[1] 李明海 黄信凡[1] 陈坤基[1] 

机构地区：[1]南京大学物理系

出　　处：《物理学报》2002年第4期877-881,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :6 9890 2 2 5和 10 0 740 2 3)~~

摘　　要：以CdSe纳米晶体为核 ,用胶体化学的方法 ,通过化学替代反应 ,获得了不同阱层或不同垒层的CdSe HgSe CdSe量子点量子阱 (QDQW)晶体 .紫外 可见光吸收谱研究表明 ,通过调节QDQW中间HgSe阱层的厚度从 0 .9nm至 0 ,可以调节QDQW颗粒的带隙从 1.8变化至 2 .1eV ,实现QDQW纳米晶体的剪裁 .光致荧光 (PL)谱研究显示 ,QDQW形成后 ,CdSe HgSe纳米颗粒表面态得到钝化 ,显现出发光强度加强的带边荧光峰 .利用有效质量近似模型 ,对QDQW晶粒内部电子的 1s— 1s态进行了估算 。Core\|shell structured CdSe/HgSe/CdSe quantum dot quantum well (QDQW) nanocrystals were synthesized and well controlled by a colloidal chemical method. The results of optical absorption studies show that with appropriate HgSe well thickness (from 0.9 nm to 0), it is possible to tailor the 1s\|1s transition energy of QDQW nanocrystals from 1.8 to 2.1 eV. The enhancement and blue shift of photoluminescence peak was observed, which was attributed to the quantum confinement effect of carriers in HgSe well. The 1s\|1s transition energies of QDQW nanocrystals have been estimated by the effective mass approximation method. The results are compared with the experimentally determined 1s\|1s energies. It is shown that the general trend observed in the experiments is well reflected in the calculation.

关 键 词：量子点量子阱晶体 能带剪裁 带边荧光峰 光学性质 电子结构 CdSe/HgSe/CdSe 晶粒 半导体 硒化镉 硒化汞 

分 类 号：O73[理学—晶体学]