再论硅光伏探测器的响应度  

Further Study on Responsibility of Si Photovoltaic Detector

作　　者：袁涛[1] 陈炳若[1] 郑若成[1] 

机构地区：[1]武汉大学物理科学与技术学院,湖北武汉430072

出　　处：《武汉大学学报（理学版）》2002年第1期77-80,共4页Journal of Wuhan University:Natural Science Edition

基　　金：武汉市科技攻关项目资助 ( 2 0 2 12 0 92 9)

摘　　要：实验中发现部分硅光伏探测器在以光生电压为输出信号时 ,开路电压 VOC存在异常现象 .在一定强度的光照下 VOC出现峰值 ,随后 VOC随入射光强的上升而下降 .本文对这种异常现象的规律进行了研究和分析 ,认为该现象的产生是由于在金属与半导体之间形成了整流接触 。The open circuit voltage of silicon photovoltaic detector (UV\|110) was studied in this paper. An abnormal peak voltage was observed in some devices at definite illumination, then the open circuit voltage decreases with increasing light intensity. The results indicate that the rectification contact between metal and semiconductor is responsible for the abnormal phenomenon. It also strongly degrades the responsibility of these devices.

关 键 词：硅光伏探测器 开路电压 并联电阻 串联电阻 整流接触 响应度 光敏器件 

分 类 号：TN364.1[电子电信—物理电子学]