硅异质结太阳电池窗口层性能研究及高效电池制备  

IMPROVEMENT OF ITO/LAYERED a-Si:H(p)FILM STACK FOR SILICON HETEROJUNCTION SOLAR CELLS

作　　者：谷士斌 张娟 任明冲 杨荣 李立伟 郭铁 Gu Shibin;Zhang Juan;Ren Mingchong;Yang Rong;Li Liwei;Guo Tie(ENN Solar Energy Co.,Ltd.,Langfang065001,China;State Key Laboratory of Coal-based Low Carbon Energy,Langfang065001,China)

机构地区：[1]新奥光伏能源有限公司,廊坊065001 [2]煤基低碳能源国家重点实验室,廊坊065001

出　　处：《太阳能学报》2018年第11期3069-3075,共7页Acta Energiae Solaris Sinica

摘　　要：主要研究a-Si:H(p)作为电池的发射极和ITO作为电池载流子收集层的材料性能及结构对HJT电池性能的影响。通过调整a—Si:H(p)材料的掺杂浓度、材料厚度和ITO的氧气,氩气分压、功率等工艺参数,获得工艺参数、材料性能和电池性能之间的关系。借助a-Si:H(p)和ITO工艺优化,电池的填充因子FF达到80.2%,转换效率Eff可达23.05%。This work focuses on the development of integrated front side film stack containing a-Si∶H(p)film as the emitter and ITO film as the carrier collection layer in n- type silicon heterojunction (HJT) solar cells. Doping concentration and thickness of a-Si∶H(p)films,and O2/Ar flow ratio of DC sputtered ITO films were varied to obtain improved single layer properties. A combined ITO/layered a- Si∶H(p)was then developed and optimized to improve performance of HJT solar cells. As a result,fill factor higher than 80.2 % and conversion efficiency of 23.05 % have been achieved in this work.

关 键 词：HJT太阳电池 ITO薄膜 a-Si:H(p) 掺杂浓度 电导率 

分 类 号：TK513.5[动力工程及工程热物理—热能工程]