SiC MOSFET和GaN HEMT的导通电阻可靠性评估  

On-Resistance Reliability Evaluation of SiC MOSFET and GaN HEMT

作　　者：蒋多晖 周伟成[2] 张斌[2] 郭清[2] Jiang Duohui;Zhou Weicheng;Zhang Bin;Guo Qing(Department of Electrical Engineering,Anhui Electrical Engineering Professional Technique College,Hefei 230051,China;College of Electrical Engineering,Zhejiang University,Hangzhou 310027,China)

机构地区：[1]安徽电气工程职业技术学院电力工程系,合肥230051 [2]浙江大学电气工程学院,杭州310027

出　　处：《半导体技术》2018年第12期936-940,963,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(51577169)

摘　　要：碳化硅金属氧化物半导体场效应管(Si C MOSFET)和氮化镓高电子迁移率晶体管(GaN HEMT)这两种器件内部存在容易捕获电子的"陷阱",会影响导电沟道的性能,进而影响器件的导通电阻。对SiC MOSFET和GaN HEMT各选取了一款典型的商用器件,分别对Si C MOSFET和GaN HEMT的导通电阻可靠性进行了测试。测试结果表明,Si C MOSFET的导通电阻变化量相对小,且应力停止后导通电阻可以恢复到初始状态,这说明其界面态陷阱密度比GaN HEMT更低,因此实际应用中无需考虑导通电阻的稳定性;而GaN HEMT的动态电阻变化较大,这极大地增加了导通损耗,影响系统的可靠性,因此在实际应用中需要考虑导通电阻变化对导通性能的影响。Because of electron "traps"in the two devices,silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET)and gallium nitride high electron mobility transistor (GaN HEMT), the performance of the conducting channel will be affected,and then the on-resistance of the device will be affected.The typical commercial SiC MOSFET and GaN HEMT were selected for investigation.The re- liabilities of on-resistance of SiC MOSFET and GaN HEMT were tested respectively.The test results show that the change of on-resistance of SiC MOSFET is less than that of GaN HEMT and the on-resistance can recover to the initial state after stress Stopped,which means that the trap density of interface state of SiC MOSFET is lower than that of GaN HEMT.It is not necessary for SiC MOSFET to consider the stability of on-resistance in practical applications.However,the dynamic resistance of GaN HEMT varies greatly, which greatly increases the conduction loss and affects the reliability of the whole system.Therefore,it is necessary to consider the effect of on-resistance change on conduction performance in practical applica- tions.

关 键 词：碳化硅金属氧化物半导体场效应管(SicMOSFET) 氮化镓高电子迁移率晶体管(GaNHEMT) 高温 稳定性 可靠性 

分 类 号：TN386[电子电信—物理电子学]