GaP表面粗化对AlGaInP发光二极管光电特性的影响  

Influence of GaP roughening for AlGaInP LED photoelectric characteristics

作　　者：肖和平 朱迪 XIAO He-ping;ZHU Di(Yangzhou Changelight Co.Ltd,Jiangsu Yangzhou 225101,China)

机构地区：[1]扬州乾照光电有限公司,江苏扬州225101

出　　处：《光电子．激光》2018年第12期1275-1280,共6页Journal of Optoelectronics·Laser

摘　　要：采用湿法溶液粗化AlGaInP基红光LED表面GaP层,并在粗化后的GaP表面沉积ITO,研究了粗化时间对GaP表面形貌的影响,并利用SEM、半导体芯片测试机、X射线衍射仪、X射线光电子能谱对LED器件表面形貌、光电特性曲线、界面晶向、元素特性进行表征,比较了粗化前后的LED亮度和光电特性变化。测试结果表明:采用HIO4、I2、HNO3系列粗化液在室温、粗化时间为30S时,有效增加了光在通过GaP面与ITO界面时的出光角度,使AlGaInP发光二极管的发光效率提高21.4%,同时引起界面处的缺陷密度升高,费米能级远离价带,主波长蓝移0.36nm,正向电压上升0.04V。The wet method is used to roughen the GaP layer on the AlGaInP-based red LED surface and deposit the ITO on the roughened GaP surface.The effect of roughening time on the surface morphology of GaP is studied.Scan electron microscopy(SEM),semiconductor wafer tester,X-ray diffractometer(XRD)and X-ray photoelectron spectroscopy(XPS)are used to characterize the morphology,optical and electrical characteristics,interfacial orientation and elemental properties of the LED devices.The brightness of the LED before and after coarsening and changes in the photoelectric properties are analyzed.The test results show that the HIO4,I2,HNO3 series roughening solution can effectively increase the light output angle through the GaP surface and the ITO interface at room temperature,and the roughening time of 30 scan improve the light emitting efficiency of the AlGaInP LED by 21.4%.At the same time,the defect density at the interface is increased,which leads to the Fermi level away from the valence band,resulting in a forward voltage increase of 0.04 Vand dominant blue shift of wavelength of0.36 nm.

关 键 词：AlGaInP二极管 湿法粗化 出光角度 发光效率 

分 类 号：TN253[电子电信—物理电子学]