基于大功率全SiC器件的变换器研究  

Research on High-power Full SiC Converter

作　　者：张庆 张小勇 饶沛南 施洪亮 赵明锐 周帅 ZHANG Qing;ZHANG Xiaoyong;RAO Peinan;SHI Hongliang;ZHAO Mingrui;ZHOU Shuai(Technology Center,Zhuzhou CRR.C Times Electric Co.,Ltd.,Zhuzhou,Hunan 412001,China)

机构地区：[1]株洲中车时代电气股份有限公司技术中心

出　　处：《机车电传动》2018年第6期63-66,共4页Electric Drive for Locomotives

摘　　要：为了适应变流器产品高频化、高功率密度的发展趋势,研究了大功率全SiC MOSFET器件在变换器中的应用,讨论了全SiC MOSFET器件在应用中的杂散参数问题和桥臂串扰问题。通过双脉冲试验,重点研究了驱动电阻和吸收装置对大功率全SiC MOSFET器件关断尖峰电压的影响。结合实际产品研究了基于大功率SiCMOSFET器件在轨道交通Boost变换器中的应用。试验表明,相对于硅基IGBT器件,采用SiCMOSFET器件能给变换器带来轻量化、工作频率、效率的全方位提升。In order to adapt to the development trend of high frequency and high power density of converter products,the application of high-power all-SiC-MOSFET device in converter was studied.The problem of stray parameters and bridge arms crosstalk in application of all-SiC-MOSFET devices was discussed.The effect of drive resistance and absorber on the closing peak of high-power all-SiC- MOSFET device was studied.The application of high-power SiC-MOSFET device in Boost converter was studied.The experiment showed that compared with the original Si-IGBT,the adoption of SiC-MOSFET device could bring an all-round improvement in light weight,working frequency and efficiency to the converter.

关 键 词：SIC器件 SiCMOSFET 杂散电感 桥臂串扰 振荡抑制 高频化 

分 类 号：U264.37[机械工程—车辆工程] TN304.24[交通运输工程—载运工具运用工程]