一种背面深槽填充P型多晶硅RC-IGBT  

A RC-IGBT with Backside-Trench Filled with P-Type Poly Silicon

作　　者：孙旭 陈星弼[1] SUN Xu;CHEN Xingbi(State Key Lab.of Elec.Thin Films and Integr.Dev.,UESTC,Chengdu 610054,P.R.China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微电子学》2018年第6期830-833,共4页Microelectronics

基　　金：国家自然科学基金资助项目(51237001)

摘　　要：提出了一种新型RC-IGBT,在背面阳极处设置了填充重掺杂P型多晶硅的深槽和FOC浮空电极。器件正向导通时,利用重掺杂P型多晶硅与N型衬底的接触电势差,将槽间的N型衬底部分耗尽,增强了阳极PN结的短路电阻,在较短背面阳极尺寸的条件下实现了RC-IGBT在开启过程中不出现电压折回现象。在器件反向开启过程中,空穴电流经过FOC浮空电极流入P型多晶硅,降低了多晶硅与N型衬底之间的势垒,提高了反向二极管的开启速度,降低了开启过程中二极管的过充电压。仿真结果表明,提出的新型RC-IGBT完全消除了电压折回现象,反向电流的均匀性得到了提高。相比于传统RC-IGBT,该新型RC-IGBT的元胞背面尺寸减小了88.89%,关断损耗降低了26.37%,反并联二极管的反向恢复电荷降低了13.12%。A novel RC-IGBT with FOC floating electrode and backside-trench which was filled with heavily doped P-type poly silicon at the anode was proposed.When the device was turned on,the short-circuit resistance of the anode PN junction was enhanced with thecontact potential difference between the P-type poly silicon and the N-type substrate.When the device was in the reverse conducting state,the hole current flowed into the P-type poly silicon through the FOC floating electrode which reduced the potential difference between the P-type poly silicon and the N-type substrate,thereby having increased the turn-on speed and lowering the overshot voltage,Numerical simulations showed that the snapback phenomenon was eliminated completely,and the uniformity,of the reverse current was improved.The back-side cell size of the proposed RC-IGBT was reduced by 88.89%,the turn-off loss was reduced by 26.37%,and the reverse recovery charge of anti-parallel diode was reduced by 13.12%compared with that of the conventional RC-IGBT.

关 键 词：无电压折回 背面深槽 P型多晶硅 开关损耗 

分 类 号：TN386.2[电子电信—物理电子学]