CaSnO3掺杂BST基介电陶瓷介电性能的研究  

Study on Dielectric Properties of BST Based Dielectric Ceramics Doped with CaSnO3

作　　者：林榕 谢冬桔 胡勇 赵明辉 黄新友[2] LIN Rong;XIE Dongju;HU Yong;ZHAO Minghu;HUANG Xinyou(Shantou High-New Zone Songtian Enterprise Co.,Ltd,Shantou 515041,China;School of Materials Science and Engineering,Jiangsu University,Zhenjiang 212013,China)

机构地区：[1]汕头高新区松田实业有限公司,汕头515041 [2]2江苏大学材料科学与工程学院,镇江212013

出　　处：《中国陶瓷》2018年第12期42-46,共5页China Ceramics

基　　金：广东省教育部产学研结合项目资助(No.2011B090400027);广东省汕头市科技计划项目(94)

摘　　要：采用传统固相法制备了CaSnO3掺杂(Ba0.71Sr0.29)TiO3(BST)介电陶瓷。研究了CaSnO3掺杂量对BST电容器介电陶瓷介电性能、物相组成和微观结构的影响。结果表明:随着CaSnO3掺杂量的增加,BST陶瓷的相对介电常数(εr)先减小后增大再又减小,介质损耗(tanδ)先减小然后增大,CaSnO3掺杂后的BST陶瓷仍为钙钛矿结构。当CaSnO3掺杂量为质量分数6.0%时,BST陶瓷的综合介电性能最好:εr为4963,tanδ为0.0069,ΔC/C为19.69%^-26.18%,容温特性符合Y5V特性。CaSnO3 doped(Ba0.71Sr0.29)TiO3(BST) ceramics were prepared by solid state method. Influence of CaSnO3 doping amount on the dielectric properties, phase composition and microstructure of BST capacitor ceramics were investigated. The results show that the relativity permittivity(εr) of BST ceramics decreases firstly and then increases and decreases, the dielectric loss(tanδ) decreases firstly and then increases, CaSnO3 doped BST ceramics are still the perovskite structure. When the mass fraction of CaSnO3 doping amount is 6.0%, the BST ceramics possess good comprehensive properties: εr of 4963, tanδ of 0.0069, ΔC/C of +19.69% ^-26.18%, and the capacitance temperature property is suited for Y5V.

关 键 词：钛酸锶钡 电容器陶瓷 CaSnO3 掺杂 介电性能 陶瓷 

分 类 号：TQ174.758[化学工程—陶瓷工业]