Hydrodynamic simulations of terahertz oscillation in double-layer graphene  

作　　者：Wei Feng 

机构地区：[1]Department of Physics, Jiangsu University

出　　处：《Journal of Semiconductors》2018年第12期23-25,共3页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.11604126)

摘　　要：We have theoretically studied current self-oscillations in double-layer graphene n+nn+ diodes driven by dc bias with the help of a time-dependent hydrodynamic model. The current self-oscillation results from resonant tunneling in the double-layer graphene structure. A detailed investigation of the dependence of the current self-oscillations on the applied bias has been carried out. The frequencies of current self-oscillations are in the terahertz(THz) region. The double-layer graphene n+nn+ device studied here may be presented as a THz source at room temperature.We have theoretically studied current self-oscillations in double-layer graphene n+nn+ diodes driven by dc bias with the help of a time-dependent hydrodynamic model. The current self-oscillation results from resonant tunneling in the double-layer graphene structure. A detailed investigation of the dependence of the current self-oscillations on the applied bias has been carried out. The frequencies of current self-oscillations are in the terahertz(THz) region. The double-layer graphene n+nn+ device studied here may be presented as a THz source at room temperature.

关 键 词：TERAHERTZ GRAPHENE current self-oscillation 

分 类 号：TN[电子电信]