Effect of substrate temperature on the physical properties of SnS_2:Cu thin films deposited by spray pyrolysis  

作　　者：M.R.Fadavieslam 

机构地区：[1]School of Physics, Damghan University

出　　处：《Journal of Semiconductors》2018年第12期46-51,共6页半导体学报（英文版）

摘　　要：The main impetus of the present study is to investigate thin films of tin disulfide that have been doped with copper impurities and prepared on glass substrates by using the spray pyrolysis technique. Also, the influence of the substrate temperature on the structural, optical, and electrical properties of these films are investigated.The thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), and optical absorption(UV-vis) analyses. The XRD patterns clarify that the thin films possess polycrystalline structures,having a peak associated with the(001) plane of the SnS2 phase. The average crystalline grain sizes were estimated to be within the range 5.7-7.1 nm. The SEM images indicate that the grain size increases from 53 to 114 nm with an increment in the substrate temperature, resulting in an increasing-decreasing trend in the band gap of the thin films. However, the films’ resistance decreases from 92.5 to 0.174 Ω·cm as the substrate temperature increases from 400 to 450 ℃. Also, their optical energy band gap depicts an increasing-decreasing trend with the estimated values of 2.81,3.21, and 3.06 eV at 400, 425, and 450℃, respectively. The thin films exhibit n-type conductivity.The main impetus of the present study is to investigate thin films of tin disulfide that have been doped with copper impurities and prepared on glass substrates by using the spray pyrolysis technique. Also, the influence of the substrate temperature on the structural, optical, and electrical properties of these films are investigated.The thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), and optical absorption(UV-vis) analyses. The XRD patterns clarify that the thin films possess polycrystalline structures,having a peak associated with the(001) plane of the SnS2 phase. The average crystalline grain sizes were estimated to be within the range 5.7-7.1 nm. The SEM images indicate that the grain size increases from 53 to 114 nm with an increment in the substrate temperature, resulting in an increasing-decreasing trend in the band gap of the thin films. However, the films' resistance decreases from 92.5 to 0.174 Ω·cm as the substrate temperature increases from 400 to 450 ℃. Also, their optical energy band gap depicts an increasing-decreasing trend with the estimated values of 2.81,3.21, and 3.06 eV at 400, 425, and 450℃, respectively. The thin films exhibit n-type conductivity.

关 键 词：spray pyrolysis thin film POLYCRYSTALLINE 

分 类 号：TN[电子电信]