Static performance model of GaN MESFET based on the interface state  

作　　者：Xiaohong Li Ruirong Wang Tong Chen 

机构地区：[1]Department of Electronic Engineering, Taiyuan Institute of Technology

出　　处：《Journal of Semiconductors》2018年第12期75-80,共6页半导体学报（英文版）

基　　金：Project supported by the Taiyuan Institute of Technology School Foundation

摘　　要：This paper presents a new model to study the static performances of a GaN metal epitaxial-semiconductor field effect transistor（MESFET） based on the metal-semiconductor interface state of the Schottky junction.The I-V performances of MESFET under different channel lengths and different operating systems（pinch-off or not） have been achieved by our model, which strictly depended on the electrical parameters, such as the drain-gate capacity Cgd, the source-gate capacity C;, the transconductance, and the conductance. To determine the accuracy of our model, root-mean-square（RMS） errors were calculated. In the experiment, the experimental data agree with our model. Also, the minimum value of the electrical parameter has been calculated to get the maximum cut-off frequency for the GaN MESFET.This paper presents a new model to study the static performances of a GaN metal epitaxial-semiconductor field effect transistor(MESFET) based on the metal-semiconductor interface state of the Schottky junction.The I-V performances of MESFET under different channel lengths and different operating systems(pinch-off or not) have been achieved by our model, which strictly depended on the electrical parameters, such as the drain-gate capacity Cgd, the source-gate capacity C_(gs), the transconductance, and the conductance. To determine the accuracy of our model, root-mean-square(RMS) errors were calculated. In the experiment, the experimental data agree with our model. Also, the minimum value of the electrical parameter has been calculated to get the maximum cut-off frequency for the GaN MESFET.

关 键 词：GaN MESFET static performance model interface states 

分 类 号：TN[电子电信]