Influence of well doping on the performance of UTBB MOSFETs  

作　　者：Yuqi Ren Shizhen Huang Lei Shen Xiaoyan Liu Gang Du 

机构地区：[1]College of Physics and Information Engineering, Fuzhou University [2]Institute of Microelectronics, Peking University

出　　处：《Journal of Semiconductors》2018年第12期85-89,共5页半导体学报（英文版）

基　　金：Project supported by the National Key R&D Plan(No.2016YFA0202101)

摘　　要：In this work, the impact of well doping and corresponding body bias on UTBB MOSFETs is investigated. The ability of threshold voltage adjustment is evaluated. The results indicate that well doping can change the threshold voltage both of the N and P channel UTBB MOSFETs. The maximum amplitude for a typical 26 nm gate length device is about 100 mV, and these correspond to the cases of devices with an inverse type of high concentration dopant. The body bias adjusts the threshold voltage at a rate of 100-140 mV/V for the UTBB MOSFETs with a well. By optimizing well doping and body biasing, multi-threshold-voltage UTBB MOSFETs can be designed and optimized for lower power application.In this work, the impact of well doping and corresponding body bias on UTBB MOSFETs is investigated. The ability of threshold voltage adjustment is evaluated. The results indicate that well doping can change the threshold voltage both of the N and P channel UTBB MOSFETs. The maximum amplitude for a typical 26 nm gate length device is about 100 mV, and these correspond to the cases of devices with an inverse type of high concentration dopant. The body bias adjusts the threshold voltage at a rate of 100-140 mV/V for the UTBB MOSFETs with a well. By optimizing well doping and body biasing, multi-threshold-voltage UTBB MOSFETs can be designed and optimized for lower power application.

关 键 词：UTBB MOSFET well doping threshold voltage 

分 类 号：TN[电子电信]