On-chip bias circuit for W-band silicon–germanium power amplifier  

作　　者：Shuo Yang Lijun Zhang Jun Fu Xiaobin Zhang 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]Institute of Microelectronics,Tsinghua University,Beijing 100084,China [3]Tsinghua National Laboratory for Information Science and Technology,Beijing 100084,China [4]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2018年第12期185-189,共5页半导体学报（英文版）

摘　　要：The performance of the power amplifier determines the detection capability of 77 GHz automotive radar, and the bias circuit is one of the most important parts of a silicon-germanium power amplifier. In this paper,we discussed and designed an on-chip bias circuit based on a silicon-germanium heterojunction bipolar transistor,which is used for the W-band silicon-germanium power amplifier. Considering the low breakdown voltage and the correlation between characteristic frequency and bias current density of the silicon-germanium heterojunction bipolar transistor, the bias circuit is designed to improve the breakdown voltage of the power amplifier and meet the W band characteristic frequency at the same time. The simulation results show that the designed bias circuit can make the amplifier operate normally from-40 to 125 ℃. In addition, the output power and smooth controllability of the power amplifier can be adjusted by controlling the bias circuit.The performance of the power amplifier determines the detection capability of 77 GHz automotive radar, and the bias circuit is one of the most important parts of a silicon-germanium power amplifier. In this paper,we discussed and designed an on-chip bias circuit based on a silicon-germanium heterojunction bipolar transistor,which is used for the W-band silicon-germanium power amplifier. Considering the low breakdown voltage and the correlation between characteristic frequency and bias current density of the silicon-germanium heterojunction bipolar transistor, the bias circuit is designed to improve the breakdown voltage of the power amplifier and meet the W band characteristic frequency at the same time. The simulation results show that the designed bias circuit can make the amplifier operate normally from-40 to 125 ℃. In addition, the output power and smooth controllability of the power amplifier can be adjusted by controlling the bias circuit.

关 键 词：77 GHz automotive radar SiGe power amplifier W-BAND bias circuit 

分 类 号：TN[电子电信]