Y_2O_3-Gd_2O_3-HfO_2掺杂W基直热式阴极的热发射及耐电子轰击特性  

Thermionic Emission and Anti-electron-bombing Characteristics of the Y_2O_3-Gd_2O_3-HfO_2 Doped W Base Direct-heated Cathode

作　　者：漆世锴[1,2] 王小霞 罗积润[1] 胡明炜[1,2] 李云 Qi Shikai;Wang Xiaoxia;Luo Jirun;Hu Mingwei;Li Yun(Key Laboratory of High Power Microwave Sources and Technologies,Institute of Electronics, Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院电子学研究所高功率微波源与技术重点实验室,北京100190 [2]中国科学院大学,北京100049

出　　处：《稀有金属材料与工程》2018年第12期3784-3788,共5页Rare Metal Materials and Engineering

基　　金：国家重点基础研究发展计划("973"计划)(2013CB328901);国家自然科学基金(11305177)

摘　　要：为了提高大功率磁控管阴极的耐电子轰击性能,首次采用Y_2O_3-Gd_2O_3-HfO_2(Y-Gd-Hf-O)掺杂金属W粉制备大功率磁控管用直热式阴极。对不同质量分数Y-Gd-Hf-O掺杂W基直热式阴极的热发射及耐电子轰击特性进行了研究。实验结果显示,50%Y-Gd-Hf-O掺杂W基直热式阴极具有较大的热发射能力,1500℃工作温度下即可提供1.0A/cm^2的拐点发射电流密度。10%Y-Gd-Hf-O掺杂W基直热式阴极具有较好的耐电子轰击性能,经过14 W/cm^2电子连续轰击200 h后,热发射电流密度仅下降0.1 A/cm^2。最后,对Y-Gd-Hf-O掺杂W基直热式阴极热发射及耐电子轰击机理进行了有益的探讨。In order to improve the anti-electron-bombing performance of the cathode applied in high-power magnetron tube,a method of Y2O3-Gd2O3-HfO2(Y-Gd-Hf-O)doped metallic W powders was used to prepare direct-heated cathode.The thermionic emission and anti-electron-bombing characteristics of Y-Gd-Hf-O doped cathode with different mass fractions were investigated.Experimental results show that the 50% Y-Gd-Hf-O doped cathode has large thermionic emission performance,which can provide 1.0A/cm^2 knee-point emitted current at 1500℃.The 10% Y-Gd-Hf-O doped cathode has good anti-electron-bombing capability,whose thermionic emission current density has merely fallen by 0.1A/cm^2 after 200h continuous 14W/cm^2 electron bombing.At last,the thermionic emission and anti-electron-bombing mechanisms of the Y-Gd-Hf-O doped cathode were discussed reasonably.

关 键 词：直热式阴极 磁控管 热发射 耐电子轰击 发射机理 

分 类 号：O462[理学—电子物理学]