AlGaInP红光LED的复合分布式布拉格反射镜的生长优化  

Growth Optimization of Composite Distributed Bragg Reflector for AlGaInP Red LEDs

作　　者：刘仲明 牛萍娟[1] 王迪 刘宏伟[3] 卢天博 于丹丹[3] 郏成奎 LIU Zhongming;NIU Pingjuan;WANG Di;LIU Hongwei;LU Tianbo;YU Dandan;JIA Chengkui(School of Electrical Engineering and Automation,Tianjin Polytechnic University,Tianjin,300387,CHN;School of Electronics and Information Engineering,Tianjin Polytechnic University,Tianjin,300387,CHN;Tianjin Sanan optoelectronics Co.,Ltd.,Tianjin,300384,CHN)

机构地区：[1]天津工业大学电气工程与自动化学院,天津300387 [2]天津三安光电有限公司,天津300384 [3]天津工业大学电子与信息工程学院,天津300387

出　　处：《固体电子学研究与进展》2018年第6期434-438,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61575144;61504093);天津市科技计划资助项目(16YFXTGX00230);天津市大学生创新项目(201710058072)

摘　　要：复合分布式布拉格反射镜(DBR)可以拓展反射图谱的宽度,从而能够反射更长波长的光,通过设计不同的波长组合得到的复合分布式布拉格反射镜可以优化其反射率。采用金属有机化合物化学气相沉淀法生长复合分布式布拉格反射镜样品,并使用光致发光光谱测试法进行反射图谱测试,得到不同的反射谱。对比结果后发现红光发光二极管(LED)的亮度随着反射谱的拓宽而增加,垂直反射占主导地位意味着主反射谱的个数不能减小。通过优化设计及测试比较最终选择了最优复合分布式布拉格反射镜结构即620nm×15加670nm×3加720nm×3加770nm×3加820nm×3加870nm×3的组合作为红光发光二极管装置的结构。The composite distributed Bragg reflector (DBR)can extend the width of the reflection spectrum to reflect longer wavelengths of light.The composite distributed Bragg reflector was obtained by designing different wavelength combinations which can optimize its reflectivity.A composite distributed Bragg reflector sample was grown by using a metal organic compound chemical vapor deposition method and a different reflectance spectrum was obtained by using a photoluminescence spectroscopy test for reflection map test.After comparing the results, it is found that the brightness of the red light emitting diode (LED)increases with the broadening of the reflection spectrum,and the dominant vertical reflection means that the number of main reflection spectra cannot be reduced.The DBR structure of the red LED device is finally selected as the optimal composite DBR structure by optimizing the design and test comparison,ie.620nm×15plus 670nm×3plus 720nm×3plus 770nm×3plus 820nm×3plus 870nm×3.

关 键 词：复合分布式布拉格反射镜设计 红光发光二极管 AlGaInP材料 外延生长 

分 类 号：TN312.8[电子电信—物理电子学]