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作 者:马德福 王刚 王慧芬 张亚非[1] MA Defu;WANG Gang;WANG Huifen;ZHANG Yafei(Ministry of Education Key Laboratory of Thin Film and Microfabrication Technology,Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;Shanghai Institute of Satellite Equipment,Shanghai Academy of Spaceflight Technology,Shanghai 201800,China)
机构地区:[1]上海交通大学-电子信息与电气工程学院-微纳电子学系-薄膜与微细技术教育部重点实验室,上海200240 [2]上海航天技术研究院-上海卫星装备研究所,上海201800
出 处:《中国陶瓷》2019年第1期44-51,共8页China Ceramics
基 金:航天先进技术联合研究中心技术创新项目(USCAST2013-28)
摘 要:采用O_2等离子体对柔性氟化乙烯丙烯共聚物(FEP)进行表面处理,然后,利用射频磁控溅射法在柔性氟化乙烯丙烯共聚物(FEP)上沉积修饰一层超薄SiO_2,再沉积生长ZnO:Al薄膜。主要研究探讨柔性FEP基底修饰对ZnO:Al薄膜结构、薄膜界面结合状态、薄膜形貌、电学性能、弯曲后电学性能退化、光学性能和薄膜附着力的影响机理,利用XRD、XPS、AFM、SEM、UV-Vis-NIR分光光度计、ScotchTM粘附力测试、PPMS、四探针等表征手段对薄膜结构、成分、形貌、界面及薄膜物理性能进行表征。实验表明:柔性FEP基底经修饰后生长的ZnO:Al薄膜的结晶性能得到明显的提升、薄膜内应力有效降低、SiO_2与柔性基底之间产生少量的化学键合。FEP柔性基底经修饰后,ZnO∶Al薄膜的电学性能、缓减弯曲后的电学性能变化等到明显改善、薄膜附着力有明显提高。The ultrathin flexible Fluorinated Ethylene Propylene(FEP) substrate was treated by O2 plasma, then deposited SiO2 nano layer、ZnO:Al film successively by Radio Frequency magnetron sputtering.We investigate the impacts and mechanism of modifications of flexible FEP substrate, on the film structure, interface bonding states, surface morphology, adhesion, optical and electrical properties of ZnO:Al thin film. The XRD, XPS, AFM, SEM, UV-Vis-NIR spectrophotometer, ScotchTM tape adhension tester, PPMS, four point probe were applied to analysis the film structure, element, surface morphology, interface, and physical properties of ZnO:Al thin film. The experimental results shows that after the flexible substrate modified, the crystalline of ZnO:Al thin film was perfected, the internal stress becoming smaller, few chemical bonding between SiO2 layer and substrate were produced, hence, the electrical properties, Bending resistance and film-substrate cohesion of ZnO:Al thin film were improved.
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