Bulk gallium oxide single crystal growth  

作　　者：Xutang Tao 

机构地区：[1]State Key Laboratory of Crystal Materials & Key Laboratory of Functional Crystal Materials and Device, Shandong University

出　　处：《Journal of Semiconductors》2019年第1期3-4,共2页半导体学报（英文版）

摘　　要：Gallium oxide, as a new type of ultra-wide bandgap semiconductor, is expected to be used in power electronics and solar blind UV photodetectors. The main cause of research and development onβ-Ga2O3 is inspired by its larger bandgap, higher breakdown field, bigger Baliga figure-of-merit (FOM), shorter absorption edge and lower cost compared to the third-generation semiconductors, such as SiC and GaN.

关 键 词：GALLIUM OXIDE ULTRA-WIDE bandgap SEMICONDUCTOR CRYSTAL growth 

分 类 号：TN[电子电信]